AMORPHYX PAPER RECEIVES DISTINGUISHED PAPER AWARD AT ICDT 2024
The Beijing Chapter of the Society for Information Display has awarded “Effect of Self-Alignment on BGTC IGZO AMeTFTs” ICDT 2024 Distinguished Paper status. This is the second consecutive year an Amorphyx paper has been so recognized at ICDT.
Dr. Zeumault’s paper addresses a key question for TFT development: When it comes to TFTs in display backplanes, which is better - reduced parasitic capacitance or higher mobility?
In a SPICE simulation study comparing the transient performance of two TFT technologies based on bottom-gate IGZO TFTs, the first device was self-aligned (lower capacitance, lower mobility), the other device was non self-aligned (higher capacitance, higher mobility).
The results show, for large display formats, the parasitic capacitance is limited by signal traces, not TFT capacitance, and that a higher mobility can in fact lead to overall improvements in transient performance despite a higher parasitic capacitance.
AMORPHYX SELECTED TO WORK WITH THE LG NOVA MISSION TO THE FUTURE 2022 PROGRAMME
We were pleased to have been selected by the LG Group as one of 5 display start-ups as part of the LG Group’s NOVA innovation programme as announced at CES 2023. CEO John Brewer said “This is testimony to the interest in our current AMeTFT transistor approach and the applicability of our technology to displays and beyond”
Click on image for link to website
SUMMARY OF CURRENT STATE OF IGZO TFT PERFORMANCE IN SEPTEMBER 2022 “INFORMATION DISPLAY”
Read “High Performance IGZO Backplanes for Displays” for summary of existing IGZO TFT performance improvement methodologies and a comparison to Amorphyx’s methodology for IGZO AMeTFT.
Click on image for link to article
AMORPHYX AWARDED THIRD PLACE IN 2018 HANGZHOU INTERNATIONAL ENTREPRENEURIAL TALENTS COMPETITION
Amorphyx received the Third Place Award at the 2018 Innovation and Entrepreneur Competition for Overseas Talents - Hangzhou” Competition. Over 2000 startups from around the world were invited to participate.
Amorphyx received grants from the City of Hangzhou for establishing Hangzhou Amorphous Technology Co., Ltd. 杭州阿墨非结晶科技有限公司 in Yuhang District.
AMORPHYX PRESENTS AT DSCC’S “DISPLAY 360” CONFERENCE
Metal oxide TFT technology was heralded as the future of displays 20 years ago - a higher mobility semiconductor that enabled polysilicon TFT performance with amorphous silicon’s manufacturing simplicity.
Tens of billions of dollars of display industry R&D money - from Apple, Samsung Display and LG Display to BOE and their Chinese display manufacturing colleagues - with little real benefit to show for it. Today, metal oxide TFT remains more promise than reality.
Why is high-mobility metal oxide TFT technology so difficult? The industry’s focus on semiconductor materials science for the solution ignores device physics - which is where the solution exists. This presentation reviews why device physics - not semiconductor materials science - is the most viable path to replacing the complexity and cost of polysilicon TFTs with the relative simplicity of metal oxide TFTs.
IGZO AMeTFT TECHNOLOGY FEATURES IN DSCC’s “FUTURE OF OLED MANUFACTURING” REPORT
DSCC, a Counterpoint Research Company, published a comprehensive review of the market conditions and technology challenges facing the new generation of variable image refresh rate AMOLED displays aimed at smartphone, tablet and IT applications.
The 445-page report includes a chapter on OLED in IT panels, where the report summarizes the current state of LTPS, LTPO and IGZO backplane technologies along with the technical and manufacturing challenges associated with each technology. Generation 8.7 fab plans and technology approaches for each of the 12 G8.7 fab constructions currently planned.
The report’s chapter on OLED in IT panel summarizes the state of backplane technology: a number of potential solutions, from “LTPO+” to dual-gate metal oxide, polycrystalline metal oxide, metal oxide heterojunction semiconductors, and Amorphyx’s IGZO AMeTFT.
AMORPHYX PRESENTS THE BENEFITS OF BULK ACCUMULATION AT ICDT2023
Amorphyx presented the benefits of bulk accumulation and high field strength through a smooth gate metal at ICDT 2023 in Nanjing. Amorphyx also presented a universal model for determining peak mobility and work on parasitic capacitance modelling of bottom gate top contact TFTs
“DISPLAY DAILY” ON HIGH MOBILITY
Read our recent article on why our approach delivers so much speed and mobility: Gate metal and thin gate insulator provide two new dimensions for display players to increase the Mobility of IGZO semiconductors.
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AMORPHYX PAPER SELECTED AS BEST OF CONFERENCE AT ICDT 2023
Dr. Andre Zeumault and Jose Mendez are the primary authors on a paper summarizing Amorphyx’s amorphous metal oxide and Fowler-Nordheim quantum tunneling thin film electronic devices for the new generation of high image quality, variable image refresh rate small-to-large-area displays on rigid and flexible substrates. The article was peer-reviewed by contributing editors to JSID, and was awarded a “Best Paper” designation at ICDT2023 in Nanjing, PRC in March, 2023.
The article was subsequently published in the peer-reviewed Journal of the Society for Information Display, April 2024 issue
“DISPLAY DAILY” ON REPLACING LTPO WITH IGZO AMETFT 2T1C
Ian Hendy of Hendy Consulting writers: “It is clear that refresh rate is a basis of product performance that is here to stay. With implications for better high-end gaming and low-refresh-battery enhancement this is a key product differentiator. Apple chose one path that was theoretically strong but practically difficult. Amorphyx opens up another path and new strategic options for smartphone backplanes.”
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AMORPHYX WINS INTERNATIONAL COMPETITION
Pleased to receive the First Place Award at the 2019 Innovation and Entrepreneurship Competition for Foreign Students which took place in the Xiacheng District of Hangzhou.
COLLABORATION BETWEEN BOE AND AMORPHYX FOR WORLD’S’ FIRST QUANTUM TUNNELING ELECTRONICS LCD FEATURED AT SID DISPLAY WEEK 2018
Amorphyx and BOE demonstrated the world's first use of quantum tunneling electronics to replace thin film transistors in LCD backplanes. The 5-inch diagonal 85ppi 60 Hz refresh rate color LCD integrates the fast, flexible and simple Amorphous Metal Nonlinear Resistor (AMNR) backplane circuit technology with ADvanced Super Dimension Switch (ADSDS) pixel technology owned by BOE, a global leader in semiconductor display industry as well as a supplier of IoT technologies, products and services. The combination creates an LCD with the image quality of UHD TV from a dramatically simplified backplane fabrication process.
Amorphyx replaces the semiconductor-based thin film transistors (TFT) used in today's display backplanes with quantum tunneling to improve image quality, increase fabrication plant output capacity, and reduce panel manufacturing cost. Quantum tunneling electronic devices leverage the properties of quantum physics to simplify device physical structure while increasing switching speed and eliminating leakage current. The prototype LCDs on exhibition in Display Week's I-Zone feature 65% aperture ratio and a 1000:1 contrast ratio. The AMNR technology supports over 50,000-hour display lifetimes in the UHD LCD TV application.
This breakthrough in thin film electronics technology was jointly designed and fabricated by BOE R&D Center and Amorphyx in less than 6 months. The prototypes were fabricated on G2.5 glass. Thin film depositions were performed by Amorphyx's R&D lab in Corvallis, Oregon, and BOE's laboratory line in Beijing. Amorphyx's AMNR-LCD driver system prototype features the flexibility of the AMNR technology for optimizing image quality in response to variations in manufacturing quality.
Click the title to read joint press release
Click the image to see YouTube video of AMNR-IPS LCD in action